Nanofab800Agile

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The Nanofab800Agile delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control. Oxford Instruments offers flexible tools with proven processes



The Nanofab800Agile delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control. Nanofab systems
    •   Small sample up to full 200 mm wafer capability
    •   PECVD film capability
    •   Metal organic (MOCVD) precursor delivery for compound semiconductor nanowires
    •   DC self bias for aligned growth
    •   Excellent temperature uniformity
    •   Flexible non-oxide nanowire and nanotube growth up to 800°C
    •   Agile heating and cooling for rapid turnaround
    •   Liquid precursor option
    •   Plasma catalyst conditioning
    •   Standard PECVD with appropriate gases
    •   Load lock

Nanofab800Agile deliver high performance growth of Nanotubes and Nanowires
with in situ catalyst activation and rigorous process control.
Oxford Instruments offers flexible tools with proven processes.

Process

  • Aligned Carbon Nanotube growth
  • Wide range of Nanowire materials
  • Proven repeatable processes
  • Control of length and diameters
  • Catalyst annealing
  • Improved catalyst activation by plasma treatment
  • Carbon Nanostructures
  • Silicon Nanowires

Nanostructure materials:

C, Si, Ge, ZnO, GaO, SiC, GaN, GaAs, GaP, InP, ZnS, InN

Si Nanowire Growth
Carbon Nanotube Growth
ZnO Nanowire Growth
  
Si nanowire
growth by CVD
1 µm high,
33 nm diameter grown at 400°C
CNT growth with 13 MHz
plasma at 650° C
onto a 5 nm Co catalyst
seed layer
70 nm diameter, 1 µm height
Vertically aligned ZnO nanorods
on GaN-coated sapphire.
The nanorods have an average length of 400 nm.
The structures are catalysed by Au nanoparticles.
Courtesy of University of Cambridge
Department of Engineering

 

  • transfer station (square or hexagonal)
  • vacuum cassette(s)