Nanofab700
Система для выращивание нанотрубок,нанопроводов и 2D структур плазмохимическим способом
The Nanofab700 delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control.
Nanofab systems
- Small sample up to full 200 mm wafer capability
- PECVD film capability
- Metal organic (MOCVD) precursor delivery for compound semiconductor nanowires
- DC self bias for aligned growth
- Excellent temperature uniformity
Nanofab700 process tool features
- Flexible nanowire and nanotube growth up to 650 °C
- Liquid precursor option
- Plasma catalyst conditioning
- Standard PECVD with appropriate gases
- Load lock
Nanofab700 deliver high performance growth of Nanotubes and Nanowires
with in situ catalyst activation and rigorous process control.
Oxford Instruments offers flexible tools with proven processes.
Process
- Aligned Carbon Nanotube growth
- Wide range of Nanowire materials
- Proven repeatable processes
- Control of length and diameters
- Catalyst annealing
- Improved catalyst activation by plasma treatment
- Carbon Nanostructures
- Silicon Nanowires
Nanostructure materials:
C, Si, Ge, ZnO, GaO, SiC, GaN, GaAs, GaP, InP, ZnS, InN
| Si Nanowire Growth | Carbon Nanotube Growth |
ZnO Nanowire Growth |
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| Si nanowire growth by CVD 1 µm high, 33 nm diameter grown at 400°C |
CNT growth with 13 MHz plasma at 650° C onto a 5 nm Co catalyst seed layer 70 nm diameter, 1 µm height |
Vertically aligned ZnO nanorods on GaN-coated sapphire. The nanorods have an average length of 400 nm. The structures are catalysed by Au nanoparticles. Courtesy of University of Cambridge Department of Engineering |
- transfer station (square or hexagonal)
- vacuum cassette(s)