The Nanofab700 delivers high performance growth of nanotubes and nanowires with in-situ catalyst activation and rigorous process control.
- Small sample up to full 200 mm wafer capability
- PECVD film capability
- Metal organic (MOCVD) precursor delivery for compound semiconductor nanowires
- DC self bias for aligned growth
- Excellent temperature uniformity
Nanofab700 process tool features
- Flexible nanowire and nanotube growth up to 650 °C
- Liquid precursor option
- Plasma catalyst conditioning
- Standard PECVD with appropriate gases
- Load lock
Nanofab700 deliver high performance growth of Nanotubes and Nanowires
with in situ catalyst activation and rigorous process control.
Oxford Instruments offers flexible tools with proven processes.
- Aligned Carbon Nanotube growth
- Wide range of Nanowire materials
- Proven repeatable processes
- Control of length and diameters
- Catalyst annealing
- Improved catalyst activation by plasma treatment
- Carbon Nanostructures
- Silicon Nanowires
C, Si, Ge, ZnO, GaO, SiC, GaN, GaAs, GaP, InP, ZnS, InN
|Si Nanowire Growth||
Carbon Nanotube Growth
|ZnO Nanowire Growth|
growth by CVD
1 µm high,
33 nm diameter grown at 400°C
|CNT growth with 13 MHz
plasma at 650° C
onto a 5 nm Co catalyst
70 nm diameter, 1 µm height
|Vertically aligned ZnO nanorods
on GaN-coated sapphire.
The nanorods have an average length of 400 nm.
The structures are catalysed by Au nanoparticles.
Courtesy of University of Cambridge
Department of Engineering
- transfer station (square or hexagonal)
- vacuum cassette(s)