PlasmaPro System100 ALE

As layers become thinner to enable the next generation semiconductor devices there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE delivers this through specialised hardware including:
  • Precise control of gas dose
  • Excellent repeatability of low power RF delivery
  • Rapid switching enabled by fast PLC
  • All these combine to enable etching with accuracy at the atomic scale
Our tools are well proven, with over 90% uptime and processes that are guaranteed to ensure rapid start-up during installation. The PlasmaPro 100 range supports a number of markets including but not limited to; MEMS & Sensors, Optoelectronics, Discrete Devices and Nanotechnology. It is flexible enough to be used in research and development, with the build quality to satisfy production needs. PlasmaPro 100 ALE features:
  • Superb etch depth control
  • Smooth etch surface
  •  Low damage process
  •  Digital/Cyclical etch process – Etch equivalent of ALD
  •  High selectivity
  •  Process capability upto 200mm wafers
  •  High aspect ratio (HAR) etch process
  •  Ideal for nanoscale layer etch removal


• крио-травление Si, Bosch-процессы глубокого травления Si и SOI для MEMS-структур, микропневматики и фотоники • процессы травления соединений A3B5 для огранки лазеров, формирования переходных отверстий, кристаллов для фотоники и многих других приложений в широком спектре материалов (InP, InSb, InGaAsP, GaAs, AlGaAs, GaN, AlGaN и т.д.) • пилотные запуски партий и опытно-конструкторские процессы на GaN, AlGaN и т.д.. • травление для сверхъярких светодиодов и прочих мощных устройств. • Травление металлов (Nb, W).

Transfer station (square or hexagonal)

Vacuum cassette(s)

Inductive Coupled Plasma Sources with ESS

Wide temperature range substrate

Laser interferometry /optical emission


Inductive Coupled Plasma Sources with ESS

Electrostatic Screen for ICP

“ICP Sources” without the Electrostatic Screen (ESS) have a strong capacitive coupling component leading to: * increased wall sputtering (contamination on the wafer, decreased wall lifetime/ implosions) * increased ion bombardment on the wafer (increased ion induced damage) * possibility of generator “cross talking” (instable plasma)

Wide temperature range substrate electrode:-150° C – +400° C, RF driven

Laser interferometry /optical emission-> show load sequence

Laser Interferometry The “single beam” laser interferometer is recommended for in situ rate/ depth measurements. It is often used in the “reflectance mode”, where we just monitor changes in the surface reflection. It can also be used in the “interferometric mode” , where interference signals from two interfaces (e.g. the top of a transparent layer and its bottom or the bottom of an etch and the coated substrate backside). In-situ etch rate monitoring Endpoint does not require etch stop layer Endpoint can be chosen anywhere within the layer once etch rate has been established. 675 nm is the standard wavelength for laser interferometry. However, for certain III-V applications, e.g. InP-related materials, 905 nm is often more suitable, since the index contrast between InP-related materials is greater (and absorption is lower) at 905nm. A 905 nm laser endpoint system with high gain amplification of endpoint signal is available from OPT for these demanding endpoint applications. For GaAs VCSEL DBR stack etching, it is common to use a 675 nm laser interferometer, since this gives a clearer endpoint trace, typically with each ‚ripple’ relating to each layer within the structure. For thicker GaAs layers (> about 0.5 microns of GaAs film thickness) 905 nm is typically recommended, since absorption of the laser light is much lower at this wavelength. Laser endpoint traces can be modelled by OPT for any stack of materials, allowing optimum choice of laser wavelength for any given endpoint requirement. Optical Emission

Monitoring of reactive species or etch by-products provides endpoint signal. Endpoint relies on etch stop layer. Scanned monochromator allows full spectrum analysis.

Trace achieved when etching SiOx layers down to a Si substrate. It shows a typical trace obtained when etching SiOx layers down to a Si substrate. The large picture shows the full emission spectra of the plasma. The blue and red marker lines correspond to the emission peaks of CO, which is an SiOx etch by-product, at 483 nm and 520 nm. The small graph in the top right hand corner shows the fall in the intensity of these CO etch by-product emission peaks, as the last SiOx is removed. By monitoring the time derivative of this CO emission intensity it is possible to obtain a very reliable endpoint trigger. Substrate Transfer

Plasmalab System 100: Wafer/ Substrate transfer with “Helium Backside Cooling”

  • возможность нагрева боковых стенок
  • электростатическое экран, обеспечивающий уменьшенное повреждение подложки ионами и уменьшение емкостной связи
  • электростатический подложкодержатель
  • определение конечной точки травления с помощью лазерного интерферометра и/или оптико-эмиссионного спектрометра