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Plasmalab System400



The PlasmalabSystem400 offers the flexibility of dc, pulsed dc, rf and reactive magnetron sputtering for batch or single-wafer PVD processing in production or research & development

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The PlasmalabSystem400 offers the flexibility of dc, pulsed dc, rf and reactive magnetron sputtering for batch or single-wafer PVD processing in production or research & development

Flexible volume throughput

  •  Capable of taking 8 wafers of 50, 75 or 100 mm (2, 3 or 4 inch), or 4 wafers of 150 or 200 mm (6 or 8 inch)


Range of wafer handling options:

  • Single-wafer loadlock
  •  Cassette loading
  •  Clustered cassette-to-cassette via robotic wafer transfer
  •  Clustering tools avoids oxidation and particle contamination as there is no exposure of the wafer to air between steps.  It also improves yield and throughput as it reduces handling damage and transfer times. The PlasmalabSystem400 magnetron sputter tool may be clustered with other Oxford Instruments process tools, for example:
  • Etch processes - RIE or ICP (PlasmalabSystem100, PlasmalabSystem133)
  • Deposition - PECVD, ICP-CVD (PlasmalabSystem100, PlasmalabSystem133) or atomic layer deposition (ALD) (FlexAL®)


Full range of materials

  •  Ability to sputter metals and oxides with film thicknesses from 20 nm up to several µm
  •  Suitable for full range of sputtered metals – from Al to Zr
  •  Flexibility in processes and materials is enabled by the wide temperature range of the wafer table, with both water-cooling and heating up to 300 °C
  •  rf bias allows plasma-assisted deposition for lower temperatures, greater adhesion and more flexibility in substrate material
  •  Deposit multiple materials in one chamber in a single process
  •  The PlasmalabSystem400 may be configured either with 4 x 200 mm or 6 x 100 mm rf and/or dc magnetrons. The single process chamber is divided into 4 or 6 sub-chambers, isolating the sources from each other without the high cost of clustering several single process chambers
  •  Multi-layer processes are automated by process recipes in the PC2000TM process tool software, with its intuitive graphical interface and flexible user options


The PlasmalabSystem400
provides the ability to sputter metals, oxides, nitrides and silicides with film thicknesses from 20 nm up to several μm.

  •  Flexibility in processes and materials is enabled by the wide temperature range of the wafer table, with both watercooling and heating up to 300 °C
  •  rf bias allows plasma-assisted deposition for greater adhesion and control of film structure and stoichiometry







  • substrate heating
  • separate PreEtch module
  • Vacuum Cassette optional
  • cathodes from 75 mm to 200 mm diameter