Hydride Vapour Phase Epitaxy (HVPE by TDI)
The HVPE process for the growth of Group III nitrides is based on two-step thermodynamic-driven, chemical
reaction between metallic sources of (Ga, Al, and In), HCl and ammonia at temperatures of 1000 - 1100°C and
atmospheric pressure. It provides a simple and cost effective way to grow Group III nitrides
CrystalFlex
OIPT’s multi wafer HVPE reactor providing superb epitaxial growth control
- Flexible growth rates, from 1 µm/hour (for submicron layer
- control) to1000 µm/hour (for fast buffer layer growth)
- Low dislocation density
- Wide range of layer thickness up to 100 µm
- Cost effective templates for device manufacturing
- P and N type doped materials are available