Failure Analysis
Oxford Instruments offers a unique family of de-processing solutions for Failure Analysis.
These flexible failure analysis tools allow a whole range of processes
from passivation removal to anisotropic oxide removal, from small die
or packaged device through to 300 mm wafers.
Benefits
- Flexible processes using either RIE/PE or ICP
- Advanced die process: Etch rate 20 times faster than standard RIE processes using the Plasma Accelerator
- Broad product range:
- µEtch300 for 300mm wafer processing
- µEtchICP is a fast and low damage tool for small die and packaged devices
- µEtch200 for 200mm wafer processing
- µEtchEL is an entry level dual-mode RIE/PE etch tool
Applications
- Isotropic polyimide removal (RIE or ICP mode)
- Isotropic Nitride (passivation) removal (PE or ICP mode)
- Anisotropic Oxide (IMD/ILD) removal (RIE or ICP mode)
- Anisotropic Low-K Oxide removal (RIE or ICP mode)
- Metal skeleton removal (RIE or ICP mode)
- Poly-Si removal (RIE mode)
- Al and Cu removal (ICP mode)
- Backside Bulk Si removal (ICP mode)
Plasmalab µEtch300
| Electrode Size | 380mm or 460mm |
| Wafer Size | Up to 300mm |
| Loading | Open load |
| Generator Frequancy Range | RF (13.56MHz) |
| Plasma mode | RIE/PE |
| Wafer stage temperature | 0ºC – 80ºC |
| Process gases | CHF3, Ar, CF4,O2 |
| Plasma accelerator | Yes |
Plasmalab µEtch200
| Electrode Size | 240mm |
| Wafer Size | Up to 200mm |
| Loading | Open load |
| Generator Frequency Range | RF (13.56MHz) |
| Plasma Mode | RIE/PE |
| Wafer stage temperature | 0ºC – 80ºC |
| Process gases | CHF3, Ar, CF4,O2 |
| Plasma accelarator | No |
Plasmalab µEtch ICP
| Electrode Size | 240mm |
| Wafer Size | Up to 200mm |
| Loading | Open load |
| Generator Frequency Range | RF (13.56MHz) |
| Plasma Mode | RIE/PE |
| Wafer stage temperature | 0ºC – 80ºC |
| Process gases | CHF3, Ar, CF4,O2 |
| Plasma accelerator | Yes |
Plasmalab µEtchEL
| Electrode Size | 240mm |
| Wafer Size | Up to 50mm |
| Loading | Open load |
| Generator Frequency range | RF(13.56MHZ), ICP (13.56MHz) |
| Plasma Mode | ICP |
| Wafer stage temperature | 0ºC – 80ºC |
| Process gases | CHF3, Ar, CF4,O2, SF6 |
| Plasma accelerator | Yes |